| PART |
Description |
Maker |
| EDI88512CAXMB EDI88512LPAXMB EDI88512LPAXMC EDI885 |
512Kx8 Plastic Monolithic SRAM CMOS
|
WEDC[White Electronic Designs Corporation]
|
| WMS512K8BV-17CCE WMS512K8BV-17CIE WMS512K8BV-17FCE |
SRAM|512KX8|BICMOS-TTL|DIP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|FP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|SOJ|32PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 32脚|陶瓷
SRAM|512KX8|BICMOS-TTL|FP|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电|计划生育| 36PIN |陶瓷
SRAM|512KX8|BICMOS-TTL|SOJ|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 36PIN |陶瓷
|
Electronic Theatre Controls, Inc.
AMIC Technology, Corp.
|
| WMF512K8-90CM5 WMF512K8-70CM5 WMF512K8-70CM5A WMF5 |
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
|
WEDC[White Electronic Designs Corporation]
|
| HY628400 |
IC,SRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Hynix
|
| EM39LV040-90FDI EM39LV040-55FDI EM39LV040-45RFDI E |
39514262
4M (512Kx8) Bits Flash Memory 4分（512Kx8）位快闪记忆
|
ELAN Microelctronics Corp .
Elan Microelectronics, Corp.
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| WMS512K8V-15 WMS512K8V-20CI WMS512K8V-20CLIA WMS51 |
From old datasheet system
RECTIFIER SBR DUAL 20A 150V 150A-ifsm 880mV-vf 0.1mA-ir ITO-220AB 50/TUBE
RECTIFIER SBR DUAL 20A 40V 120A-ifsm 530mV-vf 0.5mA-ir TO-220AB 50/TUBE
BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Overtravel Plunger Actuator, 2,5 N - 3,61 N [9 oz - 13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO,
FLEX CONNECTOR, 21 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, , TAPE & REEL RoHS Compliant: Yes 512Kx8整装静态存储器
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
|
List of Unclassifed Man...
White Electronic Designs
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| MSM832T MSM832S MSM832V MSM832W |
(MSM832x) 32K x 8 Monolithic CMOS SRAM
|
Hybrid Memory Products
|
